TSHG6200 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

技术特性
  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
Datasheet
3D Models (*.zip)
TSHG6200 81078
Opto 3D Models 81321
TSHG6200 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 81078