TSHG5510 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

技术特性
  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
Datasheet
3D Models (*.zip)
Product Literature
  • Product Sheet - 830 nm, 850 nm, and 870 nm High Intensity Infrared Emitters
TSHG5510 81887
Opto 3D Models 81321
Product Sheet 81223
TSHG5510 High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 81887