V8P8-M3, V8P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A

技术特性
  • Very low profile - typical height of 1.1 mm
  • Ideal for automated placement
  • Trench MOS Schottky technology
Datasheet
V8P8-M3, V8P8HM3 87709
V8P8-M3, V8P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A 87709