V12P8-M3, V12P8HM3 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 6 A
技术特性
- Very low profile - typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
Datasheet
- V12P8-M3, V12P8HM3 87714
