VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

技术特性
  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
Datasheet
Application Notes
Markings
Packaging Information
VT3060C-M3/HM3, VIT3060C-M3/HM3 89235
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Application Note 88755
Diodes Group Body Marking 89174
Packaging Information 30205
VT3060C-E3, VFT3060C-E3, VBT3060C-E3, VIT3060C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier 89134