VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A
技术特性
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Markings
- Diodes Group Body Marking - Marking
