VFT3060G Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A
技术特性
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Markings
- Diodes Group Body Marking - Marking
- VFT3060G 89257
- Diodes Group Body Marking 89174
- VFT3060G 89257
