VFT3045CBP Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A
技术特性
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
Datasheet
Markings
- Diodes Group Body Marking - Marking
- VFT3045CBP 89369
- Diodes Group Body Marking 89174
- VFT3045CBP 89369
