VFT30L60C Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A _ BDTIC 中国领先电子元器件代理商

VFT30L60C Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

VFT30L60C

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

VFT30L60C

Markings

Diodes Group Body Marking - Marking

VFT30L60C 89378

Diodes Group Body Marking 89174

VFT30L60C Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A 89436

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