VF30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A _ BDTIC 中国领先电子元器件代理商

VF30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A

VF30M120C-M3

技术特性

Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation

Datasheet

VF30M120C-M3

Markings

Diodes Group Body Marking - Marking

VF30M120C-M3 89470

Diodes Group Body Marking 89174

VF30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A 89470

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