IRFI644G, SiHFI644G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFI644G, SiHFI644G 91151
Device Application Note AN949 91214
General Information 91155
IRFI644G_RC, SiHFI644G_RC 91151
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI644G, SiHFI644G Power MOSFET 91151