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IRFI830G, SiHFI830G Power MOSFET

技术特性

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm

Datasheet

• IRFI830G, SiHFI830G

Application Notes

• Device Application Note AN1005 - Power MOSFET Avalanche Design Guidelines

General Information

• General Information - Useful Web Links

RC Thermal Models

• IRFI830G_RC, SiHFI830G_RC - R-C Thermal Model Parameters

Reliability Data

• Package Reliability - Environmental and Package Testing Data for TO-220 FullPAK
• Silicon Technology Reliability - N-Channel Accelerated Operating Life Test Result