IRFIBE20G, SiHFIBE20G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFIBE20G, SiHFIBE20G 91183
Device Application Note AN1005 91051
General Information 91155
IRFIBE20G_RC, SiHFIBE20G_RC 91183
Package Reliability 91155
Silicon Technology Reliability 63402
IRFIBE20G, SiHFIBE20G Power MOSFET 91183