VS-GA200SA60UP Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
技术特性
- Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode
- Very low conduction and switching losses
- Fully isolate package (2500 VAC/RMS)
Datasheet
Application Notes
Package Drawings
Packaging Information
Product Literature
- Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
- Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
Published Articles
- Article - High Power and Hybrid Vehicles Increase Demand for Load Dump Protection by Soo Man (Sweetman) Kim (Autoelectronics.com,
Oct 16 2008)
