VS-GT50TP60N Half Bridge IGBT Power Module, 600 V, 50 A
技术特性
- Low VCE(on) trench IGBT technology
- 5 µs short circuit capability
- VCE(on) with positive temperature coefficient
Datasheet
Application Notes
- Application Note - Mounting Instructions for INT-A-PAK Modules
Package Drawings
- Outline Dimensions - INT-A-PAK
Product Literature
- Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
- VS-GT50TP60N 94666
- Application Note 95901
- Outline Dimensions 94666
- Selector Guide 93281
- VS-GT50TP60N Half Bridge IGBT Power Module, 600 V, 50 A 94666
