VS-GB90DA120U Insulated Gate Bipolar Transistor (Ultrafast IGBT), 80 A
技术特性
- NPT Gen 5 IGBT technology
- Square RBSOA
- HEXFRED® low Qrr, low switching energy
Datasheet
Application Notes
- Application Note - Mounting Instructions for SOT-227 Modules
Package Drawings
- Outline Dimensions - SOT-227 Generation II
Packaging Information
- Packaging Information - SOT-227 Generation II
Product Literature
- Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
- Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
- Tradeshow Brochure - IGBT Power Modules
- VS-GB90DA120U 94722
- Application Note 94856
- Packaging Information 94856
- Miscellaneous 93990
- Selector Guide 93281
- Tradeshow Brochure 93990
- VS-GB90DA120U Insulated Gate Bipolar Transistor (Ultrafast IGBT), 80 A 94722
