HMC311LP3 InGaP HBT Gain Block Amplifier SMT, DC - 6 GHz

The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components.

Applications

Cellular / PCS / 3G
Fixed Wireless & WLAN
CATV & Cable Modem
Microwave Radio

Features and Benefits

P1dB Output Power: +15.5 dBm

Output IP3: +32 dBm

Gain: 14.5 dB

50 Ohm I/O’s

16 Lead 3x3 mm SMT Package: 9mm²

Amplifiers

Gain Blocks

Aerospace and Defense

Solutions

S-Parameters

HMC311LP3 S-Parameters .ZIP

Data Sheets

Document	note
HMC311LP3 Data Sheet	PDF 656.05 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC311LP3 Production	16 ld QFN (3x3mm w/1.7mm ep)	OTH 50	-40 to 85C	6.55	5.3	N
HMC311LP3E Production	16 ld QFN (3x3mm w/1.7mm ep)	OTH 50	-40 to 85C	5.18	4.28	Y
HMC311LP3ETR Production	16 ld QFN (3x3mm w/1.7mm ep)	REEL 500	-40 to 85C	5.18	4.28	Y
HMC311LP3TR Production	16 ld QFN (3x3mm w/1.7mm ep)	REEL 500	-40 to 85C	6.55	5.3	N