HMC395-DIE InGaP HBT Gain Block Amplifier Chip, DC - 4 GHz

The HMC395 die is a GaAs InGaP Heterojunction Bi-polar Transistor (HBT) Gain Block MMIC DC - 4 GHz amplifier. This amplifier die can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17dBm output power. The HMC395 offers 16 dB of gain and an output IP3 of +31dBm while requiring only 54mA from a +5V supply.

The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC395 can easily be integrated into Multi-Chip-Modules (MCMs) due to its small (0.22mm²) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils).

Applications

Microwave & VSAT Radios
Test Equipment
Military EW, ECM, C³I
Space Telecom

Features and Benefits

Gain: 15 dB

P1dB Output Power: +16 dBm

Stable Gain Over Temperature

50 Ohm I/O’s

Small Size: 0.38 x 0.58 x 0.1 mm

Amplifiers

RF Amplifiers

S-Parameters

HMC395 S-Parameter .ZIP

Data Sheets

Document	note
HMC395 Data Sheet	PDF 528.43 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K