HMC562-DIE Wideband Driver Amplifier Chip, 2 - 35 GHz
The HMC562 is a GaAs MMIC PHEMT Distributed Driver Amplifier die which operates between 2 and 35 GHz. The amplifier provides 12.5 dB of gain, +27 dBm output IP3 and +12 dBm of output power at 1 dB gain compression while requiring 80 mA from a +8V supply. The HMC562 is ideal for EW, ECM and radar driver amplifier applications. The HMC562 amplifier I/O’s are DC blocked and internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
Applications
Features and BenefitsP1dB Output Power: +12 dBmGain: 12.5 dBOutput IP3: +19 dBmSupply Voltage: +8V @ 80 mA50 Ohm Matched Input/OutputDie Size: 3.12 x 1.42 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC562 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 223.13 | 180.73 | Y |
| HMC562-SX Production | CHIPS OR DIE | OTH 2 | | 0 | 0 | Y |
Reference Materials
