HMC5805 GaAs pHEMT MMIC 0.25 Watt Power Amplifier, DC - 40 GHz

The HMC5805LS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, +33 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC5805LS6 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC5805LS6 amplifier I/Os are internally matched to 50 Ohms and the 6x6 mm SMT package is well suited for automated assembly techniques.

Applications

Features and Benefits
  • High P1dB Output Power: +22 dBm
  • High Psat Output Power: +24 dBm
  • High Gain: 13.5 dB
  • High Output IP3: +33 dBm
  • Supply Voltage: +10V @ 175 mA
  • 16 Lead Ceramic 6x6 mm SMT Package
  • RF & Microwave
    Data Sheets
    Documentnote
    HMC5805 Data SheetPDF 562.87 K
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC5846LP5E Last Time BuyLFCSP:LEADFRM CHIP SCALEOTH 50-55 to 85C00Y
    HMC5846LS6 Last Time Buy16 ld LCC (6x6mm w/3.5mm EP)OTH 50-55 to 85C47.8337.63Y
    HMC5846LS6TR Last Time Buy16 ld LCC (6x6mm w/3.5mm EP)REEL 500-55 to 85C47.8337.63Y
    Evaluation Boards
    Part NumberDescriptionPriceRoHS
    EVAL01-HMC5846LS6Evaluation Board - HMC5846LS6 Evaluation Board-1Y
    Reference Materials
    HMC5805 Data Sheet hmc5805
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
    Semiconductor Qualification Test Report: PHEMT-H (QTR: 2013-00260) hmc797
    Package/Assembly Qualification Test Report: 20L 7x7mm Ceramic LCC Package (QTR: hmc5445