HMC591-Die 2 Watt Power Amplifier Chip, 6 - 10 GHz
The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 940 mA, to yield +43 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 1340 mA, to yield +33.5 dBm Output P1dB.
Applications
Features and BenefitsSaturated Output Power:
+34 dBm @ 24% PAEOutput IP3: +43 dBmGain: 23 dBDC Supply: +7V @ 1340 mA50 Ohm Matched Input/OutputDie Size: 2.47 x 2.49 x 0.1 mm | |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC591 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 54.3 | 43.98 | Y |
| HMC591-SX Production | CHIPS OR DIE | OTH 2 | -40 to 85C | 0 | 0 | Y |
Reference Materials
