HMC930A-DIE GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz

The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

Applications

Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics

Features and Benefits

High output power for 1 dB compression (P1dB): 22 dBm

High saturated output power (PSAT): 24 dBm

High gain: 13 dB

High output third-order intercept (IP3): 33.5 dBm

Supply voltage: 10 V at 175 mA

50 Ω matched input/output

Die size: 2.82 mm × 1.50 mm × 0.1 mm

RF & Microwave

Power Amplifiers

Data Sheets

Document	note
HMC930A: GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz Die Data Sheet (Rev. 0)	PDF 246.66 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC930A Production	CHIPS OR DIE	OTH 10	-55 to 85C	160	155	Y
HMC930A-SX Production	CHIPS OR DIE	REEL 2	-55 to 85C	0	0	Y

HMC930A: GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz Die Data Sheet (Rev. 0) hmc930a-die