HSMS-286B High frequency detector diode

Features

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV

SpecificationValue
LifecycleActive
Distrib. InventoryYes
Samples AvailableNo
ConfigurationSingle
Ct Pf0.3
RoHS6 CompliantY
Max Qty of Samples0
PackageSOT-323
Vbr V4.0
Vf Mv250.0
Series Res In Ohms14.0
Application Brief (1)
Application Note (15)
Data Sheet (1)
Equivalent Circuit (1)
Product Change Notice (PCN) (17)
Reliability Data Sheet (1)
Spice Model (1)