DMHC10H170SFJ:H-Bridge MOSFETs

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapableTypeESD Diodes (Y/N)VDS (V)VGS (±V)IDSA +25ºC (A)PDW +25ºC (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)CISS Typ (pF)QG Typ@ VGS = 10V(nC)
DMHC10H170SFJDMHC10H170SFJ.pdfDMHC10H170SFJYesYes2 x N 2 x PNo10020-2.3 2.92160 250200 3001167 123917.5 9.7
Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application
  • High-Efficiency Bridge Rectifiers
Features
  • Low On-Resistance
  • Low Input Capacitance
Ordering Information
  • DMHC10H170SFJ-13
V-DFN5045-12
DMHC10H170SFJ.pdf DMHC10H170SFJ