FDMD8240LET40: Dual N-Channel Power Trench® MOSFET

This device includes two 40V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain are internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

• Extended TJ Rating to 175 °C
  
• Max r_DS(on) = 2.6 mΩ at V_GS = 10 V, I_D = 23 A
  
• Max r_DS(on) = 3.95 mΩ at V_GS = 4.5 V, I_D = 19 A
  
• Ideal for Flexible Layout in Primary Side of Bridge Topology
  
• 100% UIL Tested
  
• Kelvin High Side MOSFET Drive Pin-out Capability
  
• Termination is Lead-free and RoHS Compliant
  

Application Notes