FDMD85100: Dual N-Channel PowerTrench® MOSFET

This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

Features

• Max r_DS(on) = 9.9 mΩ at V_GS = 10 V, I_D = 10.4 A
  
• Max r_DS(on) = 16.4 mΩ at V_GS = 6 V, I_D = 8 A
  
• Max r_DS(on) = 9.9 mΩ at V_GS = 10 V, I_D = 10.4 A
  
• Max r_DS(on) = 16.4 mΩ at V_GS = 6 V, I_D = 8 A
  
• Ideal for flexible layout in primary side of bridge topology
  
• Termination is Lead-free and RoHS Compliant
  
• 100% UIL tested
  
• Kelvin High Side MOSFET drive pin-out capability
  

Application Notes