FDMD8900: N-Channel PowerTrench® MOSFET

This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.

Features

• Max r_DS(on) = 4 mΩ at V_GS = 10 V, I_D = 19 A
  
• Max r_DS(on) = 5 mΩ at V_GS = 4.5 V, I_D = 17 A
  
• Max r_DS(on) = 6.5 mΩ at V_GS = 3.8 V, I_D = 15 A
  
• Max r_DS(on) = 8.3 mΩ at V_GS = 3.5 V, I_D = 14 A
  
• Max r_DS(on) = 5.5 mΩ at V_GS = 10 V, I_D = 17 A
  
• Max r_DS(on) = 6.5 mΩ at V_GS = 4.5 V, I_D = 15 A
  
• Max r_DS(on) = 9 mΩ at V_GS = 3.8 V, I_D = 13 A
  
• Max r_DS(on) = 12 mΩ at V_GS = 3.5 V, I_D = 12 A
  
• Ideal for Flexible Layout in Primary Side of Bridge Topology
  
• Termination is Lead-free and RoHS Compliant
  
• 100% UIL Tested
  
• Kelvin High Side MOSFET Drive Pin-out Capability
  

Application Notes