FDMS86150ET100: 100V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Features

• Extended TJ rating to 175°C
  
• Shielded Gate MOSFET Technology
  
• Max r_DS(on) = 4.85 mΩ at V_GS = 10 V, I_D = 16 A
  
• Max r_DS(on) = 7.8 mΩ at V_GS = 6 V, I_D = 13 A
  
• Advanced Package and Silicon combination for low r_DS(on) and high efficiency
  
• MSL1 robust package design
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes