FDT86246L: 150V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 228 mΩ at V_GS = 10 V, I_D = 2 A
  
• Max r_DS(on) = 280 mΩ at V_GS = 4.5 V, I_D = 1.8 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used
• Fast switching speed
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes