数据手册DataSheet 下载FQP6N70 700V N-Channel QFET®.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been expecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

产品特点
订购型号
订购型号产品状态定价封装&包装信息封装丝印资格支持
FQP6N70不推荐用于新设计 符合 RoHS 标准N/ATO-220 3L - 细节 4.83 x 10.16 x 8.89mm
to-220 3l 示意图
to220-3l, jedec variation, packing drawing
第一行:$Y (飞兆徽标) &Z (工厂编码) &3 (3 位日期代码) &K 第二行:FQP 第三行:6N70RƟJA : 62.5 °C/W RƟJC : 0.88 °C/W
技术资料
Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
MOSFET Basics Last Update : 09-Sep-2013
A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014