NDT451AN: N-Channel Enhancement Mode Field Effect Transistor

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features

• 7.2A, 30V. R_DS(ON) = 0.035Ω @ V_GS = 10V, R_DS(ON) = 0.05Ω @ V_GS = 4.5V.
• High density cell design for extremely lowR_DS(ON).
• High power and current handling capability in a widely used surface mount package.

Application Notes