BGA735N16

The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network.

BGA735N16
BGA735N16E6327XTSA1
active and preferred
PG-TSNP-16
yes
yes
yes
7500
TAPE & REEL
Sales Product NameBGA735N16
OPNBGA735N16E6327XTSA1
Product Statusactive and preferred
Package NamePG-TSNP-16
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size7500
Packing TypeTAPE & REEL
Summary of Features:
  • Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
  • Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode(800 MHz / 1900 MHz / 2100 MHz)
  • Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands)
  • Standby mode (< 2 μA typ.)
  • Output internally matched to 50 Ω
  • Inputs pre-matched to 50 Ω
  • 2kV HBM ESD protection
  • Low external component count
  • Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm)
  • Pb-free (RoHS compliant) package
Target Applications:
  • LNA for LTE and 3G systems
Data Sheet
TitleSizeDateVersion
BGA735N16,EN2.1 MB10 Jan 201103_08
Application Notes
TitleSizeDateVersion
AN233 - BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20856 KB06 Oct 2010
AN241 - BGA735N16 for 3G/HSPA/LTE Appl ications Supporting Bands 1, 2 and 5 with Reference Resistor Rref= 27 kΩ914 KB06 Oct 2010
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_13-34-47_MA000943184_PG-TSNP-16-1.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BGA735N16 - LTE LNA Solutions - MWO – v2.0.zipEN244 KB14 Apr 201501_00
PCB Footprints & Symbols - UMTS LTE LNA - Altium - v1.0481 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Cadence - v1.050 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Eagle - v1.09 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Mentor - v1.055 KB22 Oct 201301_00
Simulation Models
TitleSizeDateVersion
Infineon-MMIC-LNA-AWR-MWO-Design-Kit-SM-v02_00-ENEN6.2 MB11 Dec 201502_00
Infineon-BGA735N16 - LTE 3G LNAs - SimModel with symbol and footprint AWR MWO v1.0.zipEN3.1 MB31 Mar 201601_00
Infineon-MMIC-LNA-Keysight-ADS-Design-Kit-SM-v02_00-ENEN5.9 MB26 Oct 201502_00
Simulation Data
TitleSizeDateVersion
BGA735N16337 KB27 Jul 2012
Infineon-BGA735N16-SD-v01_00-ENEN475 KB19 Oct 201501_00
Package Data
TitleSizeDateVersion
PG-TSNP-16-1 | BGA735N16E6327XTSA1EN506 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BGA735N16 - LTE LNA Solutions - MWO – v2.0.zipEN244 KB14 Apr 201501_00
PCB Footprints & Symbols - UMTS LTE LNA - Altium - v1.0481 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Cadence - v1.050 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Eagle - v1.09 KB22 Oct 201301_00
PCB Footprints & Symbols - UMTS LTE LNA - Mentor - v1.055 KB22 Oct 201301_00
EN BGA735N16
AN233 - BGA735N16 for 3G/HSPA/LTE Applications Supporting Bands 3, 7 and 20 BGA735N16
AN241 - BGA735N16 for 3G/HSPA/LTE Appl ications Supporting Bands 1, 2 and 5 with Reference Resistor Rref= 27 kΩ BGA735N16
MCDS_2013-08-29_13-34-47_MA000943184_PG-TSNP-16-1.pdf BGA735N16
EN BGM15HA12
EN BGA7M1N6
EN BGA735N16
EN BGA735N16
BGA735N16 BGA735N16
EN BGA735N16
PCB Footprints & Symbols - UMTS LTE LNA - Altium - v1.0 EVAL+BGA7M1N6
EN BGA735N16
PCB Footprints & Symbols - UMTS LTE LNA - Cadence - v1.0 EVAL+BGA7M1N6
PCB Footprints & Symbols - UMTS LTE LNA - Eagle - v1.0 EVAL+BGA7M1N6
PCB Footprints & Symbols - UMTS LTE LNA - Mentor - v1.0 EVAL+BGA7M1N6