ESD18VU1B-02LS

ESD / Transient Protection Diode for Near Field Communication (NFC)

ParametricESD18VU1B-02LS
VRWM  min  max-18.5V  18.5V
CL  min  max0.3pF  0.6pF
VESD  max15.0kV
VESD (IEC61000-4-2 contact)  min10.0kV
Rdyn (reverse)0.6Ω
Rdyn (forward)0.6Ω
Vcl typ. reverse (TLP 16A)26V
Vcl typ. reverse (TLP 30A)35V
Vcl typ. forward (TLP 16A)26V
Vcl typ. forward (TLP 30A)35V
IR    (max)30.0µA  (30.0µA)
IEFTn.a.
Isurge2A
Protected Lines1
Summary of Features:
  • ESD / transient protection according to:IEC61000-4-2 (ESD contact discharge): ±10 kV,IEC61000-4-5 (surge): 2 A (tp = 8 / 20 μs)
  • AC working voltage up to ±18.5 V (VTRIG min = 20 V)
  • Ultra-low capacitance: CL = 0.3 pF (typical)
  • Small leadless plastic package, size 0201 / 0402
  • Pb-free (RoHS compliant) and halogen free package
Target Applications:
  • ESD Protection of RF signal lines in Near Field Communication (NFC) applications
Data Sheet
TitleSizeDateVersion
ESD18VU1B-02LRH,EN4.1 MB11 Feb 201401_04
Application Notes
TitleSizeDateVersion
AN210 - Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology2.1 MB06 Dec 201201_03
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - ESD18VU1B02LS - Low Capacitance ESD Devices - MWO – v2.0.zipEN243 KB14 Apr 201501_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - ESD18VU1B02LS - Low Capacitance ESD Devices - MWO – v2.0.zipEN243 KB14 Apr 201501_00
EN ESD18VU1B-02LRH
AN210 - Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology ESD5V0S1U-03W
EN ESD18VU1B-02LS