IDC73D120T6H

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricIDC73D120T6H
TechnologyEmitter Controlled Diode 4 High Power
VDS  max1200.0V
IF  max150.0A
I(FSM)  max300.0A
VF1.9V
IR  max26.0µA
Sales Product NameIDC73D120T6H
OPNIDC73D120T6HX1SA2
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • 1200V Emitter Controlled Diode 4 technology
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • Medium/ high power drives
Data Sheet
TitleSizeDateVersion
IDC73D120T6H,EN112 KB20 Sep 200700_09
EN IDC73D120T6H