IPI80P04P4L-08

ParametricIPI80P04P4L-08
RDS (on) (@10V)  max8.2mΩ
RDS (on)  max8.2mΩ
RDS (on) (@4.5V)  max13.0mΩ
QG71.0nC
VDS  max-40.0V
ID  max-80.0A
RthJC  max2.0K/W
Ptot  max75.0W
IDpuls  max-280.0A
VGS(th)  min  max-1.2V  -2.2V
Sales Product NameIPI80P04P4L-08
OPNIPI80P04P4L08AKSA1
Product Statusactive and preferred
Package NamePG-TO262-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTUBE
Summary of Features:
  • P-channel - Logic Level - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (RoHS compliant)
  • 100% Avalanche tested
Benefits:
  • No charge pump required for high side drive.
  • Simple interface drive circuit
  • World's lowest RDSon at 40V
  • Highest current capability
  • Lowest switching and conduction power losses for highest thermal efficiency
  • Robust packages with superior quality and reliability
  • Standard packages TO-252, TO-263, TO-220, TO-262
Target Applications:
  • High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)
  • Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump
Data Sheet
TitleSizeDateVersion
IPP_B_I80P04P4L-08 Data Sheet,EN206 KB27 Apr 201101_00
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 May 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 Mar 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 Jun 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 Jan 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-08-41_MA000892366_PG-TO262-3-1.pdf24 KB31 Oct 201301_00
Simulation Models
TitleSizeDateVersion
OptiMOS_P2_PSpice.zipEN92 KB07 Jan 201500_00
Package Data
TitleSizeDateVersion
PG-TO262-3-1 | IPI80P04P4L08AKSA1EN440 KB11 Apr 201601_00
EN IPP80P04P4L-08
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-08-41_MA000892366_PG-TO262-3-1.pdf IPI80P04P4L-08
EN IPP80P03P4-05
EN IPI80P04P4L-08