IRF640NL

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

ParametricIRF640NL
PackageI2PAK (TO-262)
VDS  max200.0V
RDS (on) (@10V)  max150.0mΩ
RDS (on)  max150.0mΩ
PolarityN
ID (@ TC=100°C)  max13.0A
ID  max13.0A
ID (@ TC=25°C)  max18.0A
Ptot  max150.0W
QG44.7nC
MountingTHT
RthJC  max1.0K/W
Qgd22.0nC
Tj  max175.0°C
VGS  max20.0V
Sales Product NameIRF640NL
OPNIRF640NLPBF
Product Statusactive
Package NameTO262
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF640N,EN336 KB03 Aug 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF640N
EN IDV20E65D1