IRF640NS

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ParametricIRF640NS
PackageD2PAK (TO-263)
VDS  max200.0V
RDS (on) (@10V)  max150.0mΩ
RDS (on)  max150.0mΩ
PolarityN
ID (@ TC=100°C)  max13.0A
ID  max13.0A
ID (@ TC=25°C)  max18.0A
Ptot  max150.0W
QG44.7nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max1.0K/W
VGS  max20.0V
Qgd22.0nC
Tj  max175.0°C
Sales Product NameIRF640NS
OPNIRF640NSPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
OPNIRF640NSTRLPBF
Product Statusactive
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL LEFT
Moisture Level1
OPNIRF640NSTRRPBF
Product Statusnot for new design
Package NameD2PAK
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size800
Packing TypeTAPE & REEL RIGHT
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF640N,EN336 KB03 Aug 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF640NSEN2 KB18 Jun 2001
Saber Model - IRF640NSEN2 KB18 Jun 2001
EN IRF640N
EN IDV20E65D1
EN IRF640NS
EN IRF640NS