IRF6618

A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.

ParametricIRF6618
PackageDirectFET MT
VDS  max30.0V
RDS (on)  max2.2mΩ
RDS (on) (@10V)  max2.2mΩ
RDS (on) (@4.5V)  max3.4mΩ
PolarityN
ID (@ TA=70°C)  max23.0A
ID (@ TA=25°C)  max29.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG46.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd15.0nC
RthJC  max1.4K/W
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRF6618
OPNIRF6618TRPBF
Product Statusactive
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6618,EN245 KB13 Jul 2006
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6618EN2 KB25 Jul 2003
Saber Model - IRF6618EN2 KB25 Jul 2003
EN IRF6618
EN IDV20E65D1
EN IRF6618
EN IRF6618