IRF6713S

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 22 amperes optimized with low on resistance.

ParametricIRF6713S
PackageDirectFET SQ
VDS  max25.0V
RDS (on) (@10V)  max3.0mΩ
RDS (on)  max3.0mΩ
RDS (on) (@4.5V)  max4.6mΩ
PolarityN
ID (@ TA=70°C)  max17.0A
ID (@ TA=25°C)  max22.0A
ID (@ TC=25°C)  max95.0A
Ptot (@ TA=25°C)  max2.2W
Ptot  max42.0W
QG21.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd6.3nC
RthJC  max3.0K/W
VGS  max20.0V
Tj  max150.0°C
Sales Product NameIRF6713S
OPNIRF6713STRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6713S,EN230 KB09 Jul 2007
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6713SPBFEN2 KB09 Jul 2007
Saber Model - IRF6713SPBFEN2 KB09 Jul 2007
EN IRF6713S
EN IDV20E65D1
EN IRF6713S
EN IRF6713S