IRF6798M

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 37 amperes optimized with low on resistance.

ParametricIRF6798M
PackageDirectFET MX
VDS  max25.0V
RDS (on)  max1.3mΩ
RDS (on) (@10V)  max1.3mΩ
RDS (on) (@4.5V)  max2.1mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max30.0A
ID (@ TA=25°C)  max37.0A
ID (@ TC=25°C)  max197.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max78.0W
QG50.0nC
MountingSMD
Qgd16.0nC
Moisture Sensitivity Level1
RthJC  max1.6K/W
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRF6798M
OPNIRF6798MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode
Target Applications:
  • MultiPhase SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6798M,EN248 KB11 Dec 2009
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6798MPBFEN2 KB11 Dec 2009
Saber Model - IRF6798MPBFEN2 KB11 Dec 2009
EN IRF6798M
EN IDV20E65D1
EN IRF6798M
EN IRF6798M