IRF6892S

25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 28 amperes optimized with low on resistance.

ParametricIRF6892S
PackageDirectFET S3C
VDS  max25.0V
RDS (on) (@10V)  max1.7mΩ
RDS (on)  max1.7mΩ
RDS (on) (@4.5V)  max2.6mΩ
PolarityN
ID (@ TA=70°C)  max22.0A
ID (@ TA=25°C)  max28.0A
ID (@ TC=25°C)  max125.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max42.0W
QG17.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd6.0nC
Tj  max150.0°C
VGS  max16.0V
RthJC  max3.0K/W
Sales Product NameIRF6892S
OPNIRF6892STRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • MultiPhase SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6892S,EN238 KB04 Jun 2012
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF6892S
EN IDV20E65D1