IRF7779L2

A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance.

ParametricIRF7779L2
PackageDirectFET L8
VDS  max150.0V
RDS (on) (@10V)  max11.0mΩ
RDS (on)  max11.0mΩ
PolarityN
ID (@ TA=25°C)  max11.0A
ID (@ TC=100°C)  max47.0A
ID  max47.0A
ID (@ TC=25°C)  max67.0A
Ptot (@ TA=25°C)  max3.3W
Ptot  max125.0W
QG97.0nC
MountingSMD
Qgd33.0nC
Tj  max175.0°C
VGS  max20.0V
Moisture Sensitivity Level1
RthJC  max1.2K/W
Sales Product NameIRF7779L2
OPNIRF7779L2TRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Qualified Industrial
  • Qualified MSL1
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Synchronous Rectification
  • Low Conduction Losses
  • High Cdv/dt Immunity
Target Applications:
  • Battery Operated Drive
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7779L2,EN261 KB19 Nov 2009
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF7779L2EN2 KB19 Nov 2009
Saber Model - IRF7779L2EN2 KB19 Nov 2009
EN IRF7779L2
EN IDV20E65D1
EN IRF7779L2
EN IRF7779L2