IRF8302M

30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.

ParametricIRF8302M
PackageDirectFET MX
VDS  max30.0V
RDS (on) (@10V)  max1.8mΩ
RDS (on)  max1.8mΩ
RDS (on) (@4.5V)  max2.7mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max25.0A
ID (@ TA=25°C)  max31.0A
ID (@ TC=25°C)  max190.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max104.0W
QG35.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd8.9nC
RthJC  max1.2K/W
VGS  max20.0V
Tj  max150.0°C
Sales Product NameIRF8302M
OPNIRF8302MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
  • Point of Load SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8302M,EN275 KB05 Dec 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF8302MPBFEN2 KB05 Dec 2011
Saber Model - IRF8302MPBFEN2 KB05 Dec 2011
EN IRF8302M
EN IDV20E65D1
EN IRF8302M
EN IRF8302M