IRF8308M

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance.

ParametricIRF8308M
PackageDirectFET MX
VDS  max30.0V
RDS (on) (@10V)  max2.5mΩ
RDS (on)  max2.5mΩ
RDS (on) (@4.5V)  max3.5mΩ
PolarityN
ID (@ TA=70°C)  max21.0A
ID (@ TA=25°C)  max27.0A
ID (@ TC=25°C)  max150.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG28.0nC
MountingSMD
Moisture Sensitivity Level1
Qgd8.2nC
RthJC  max1.4K/W
VGS  max20.0V
Tj  max150.0°C
Sales Product NameIRF8308M
OPNIRF8308MTRPBF
Product Statusnot for new design
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8308M,EN266 KB05 Dec 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
EN IRF8308M
EN IDV20E65D1