IRFB31N20D

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRFB31N20D
PackageTO-220
VDS  max200.0V
RDS (on) (@10V)  max82.0mΩ
RDS (on)  max82.0mΩ
PolarityN
ID (@ TC=100°C)  max22.0A
ID  max22.0A
ID (@ TC=25°C)  max31.0A
Ptot  max200.0W
QG70.0nC
MountingTHT
RthJC  max0.75K/W
Qgd33.0nC
Tj  max175.0°C
VGS  max30.0V
Sales Product NameIRFB31N20D
OPNIRFB31N20DPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB31N20D,EN291 KB03 Aug 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFBSL31N20DEN2 KB18 Jun 2001
Saber Model - IRFBSL31N20DEN2 KB18 Jun 2001
EN IRFB31N20D
EN IDV20E65D1
EN IRFB31N20D
EN IRFB31N20D