PTFB201402FC V1

High Power RF LDMOS FET, 140 W, 28 V, 2010 – 2025 MHz

ParametricPTFB201402FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2010.0MHz  2025.0MHz
P1dB140.0W
Supply Voltage28.0V
Pout20.0W
Gain16.0dB
Test SignalWCDMA
Sales Product NamePTFB201402FC V1
OPNPTFB201402FCV1XWSA1
Product Statusdiscontinued
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
OPN
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%
  • Integrated ESD protection
  • Excellent thermal stability
  • Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per side
  • Pb-free and RoHS-compliant
  • Package: H-37248-4, earless
Data Sheet
TitleSizeDateVersion
PTFB201402FC V1 DS,EN562 KB25 Feb 201203_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PTFB201402FCV1XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB201402FC RD186 KB02 Feb 201202_01
EN PTFB201402FC+V1
EN where-to-buy
EN PTFB201402FC+V1
PTFB201402FC RD PTFB201402FC+V1