PTFB211501F V1

High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz

ParametricPTFB211501F V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB150.0W
Supply Voltage30.0V
Pout32.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NamePTFB211501F V1
OPNPTFB211501FV1XWSA1
Product Statusdiscontinued
Package NameH-37248-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
OPNPTFB211501FV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.2 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% CCDF - Average output power = 40 W - Linear Gain = 18 dB - Efficiency = 32% - Adjacent channel power = –34 dBc
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
  • Pb-free and RoHS compliant
  • Package: H-37248-2, earless
Data Sheet
TitleSizeDateVersion
PTFB211501EF,EN339 KB15 Oct 201203_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PTFB 211501EF RD144 KB02 Jun 201001_00
Package Data
TitleSizeDateVersion
H-37248-2-1 | PTFB211501FV1XWSA1EN344 KB11 Apr 201601_00
EN PTFB211501F+V1
EN where-to-buy
PTFB 211501EF RD PTFB211501F+V1
EN PTFB211501F+V1