PTFB212503EL V1

High Power RF LDMOS FET, 240 W, 2110 – 2170 MHz

ParametricPTFB212503EL V1
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB240.0W
Supply Voltage30.0V
Pout55.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NamePTFB212503EL V1
OPNPTFB212503ELV1R0XTMA1
Product Statusactive and preferred
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFB212503ELV1XWSA1
Product Statusdiscontinued
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal input and output matching
  • Enhanced for use in DPD error correction systems
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 2170 MHz, 30 V, IDQ = 1.85 A, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF - Average output power = 49.4 dBm - Linear gain = 18 dB - Efficiency = 37% - Intermodulation distortion = –33 dBc
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 54 %
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW)output power
  • Pb-free, RoHS-compliant
  • Package: H-33288-6, bolt-down
Data Sheet
TitleSizeDateVersion
PTFB212503EFL,EN581 KB12 Oct 200907_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-33288-6-1 | PTFB212503ELV1XWSA1EN345 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB212503EFL RD106 KB03 Aug 201004_01
EN PTFB212503FL+V2
EN where-to-buy
EN PTFB212503EL+V1
PTFB212503EFL RD PTFB212503FL+V2