PTFB212507SH V1

High Power RF LDMOS FET, 200 W, 28 V, 2110 – 2170 MHz

ParametricPTFB212507SH V1
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB200.0W
Supply Voltage28.0V
Pout50.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NamePTFB212507SH V1
OPNPTFB212507SHV1XWSA1
Product Statusnot for new design
Package NameH-34288G-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Wide video bandwidth
  • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 3GPP signal, PAR = 8 dB, 10 MHz carrier spacing - Average output power = 40 W - Linear gain = 18 dB - Efficiency = 27% - Intermodulation distortion = –35 dBc - Adjacent channel power= –39 dBc
  • Typical CW performance, 2170 MHz, 28 V - Output power at P1dB = 200 W - Efficiency = 52%  - Gain = 17 dB
  • Capable of handling 10:1 VSWR @28 V, 200 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package: H-34288G-4/2, surface mount
Data Sheet
TitleSizeDateVersion
PTFB 212507SH DS,EN561 KB12 Jul 201202_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Package Data
TitleSizeDateVersion
H-34288G-4/2-1 | PTFB212507SHV1XWSA1EN344 KB11 Apr 201601_00
Development Tools
TitleSizeDateVersion
PTFB212507SH RD197 KB24 Apr 201202_01
EN PTFB212507SH+V1
EN where-to-buy
EN PTFB212507SH+V1
PTFB212507SH RD PTFB212507SH+V1