PXAC203302FV V1 R250

High Power RF LDMOS FET, 330W, 28V, 1880 – 2025 MHz

ParametricPXAC203302FV V1 R250
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1880.0MHz  2025.0MHz
P1dB330.0W
Supply Voltage28.0V
Pout56.0W
Gain16.0dB
Test SignalWCDMA
Sales Product NamePXAC203302FV V1 R250
OPNPXAC203302FVV1R250XTMA1
Product Statusactive and preferred
Package NameH-37275-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 130 W Typ - Peak : P1dB = 200W Typ
  • Typical Pulsed CW performance, 2025MHz, 28V, combined outputs, Doherty Configuration - Output power at P1dB = 250W - Efficiency = 55% - Gain = 16dB
  • Capable of handling 10:1 VSWR @28V, 250W (CW) output power
  • Human Body Model Class 2 (per ANSI/ESDA/JEDEC JS-001)
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PXAC203302FV,EN635 KB09 Jul 201501_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 May 201505_00
Reference Design
TitleSizeDateVersion
PXAC203302FV RDEN297 KB26 Jun 201501_00
Package Data
TitleSizeDateVersion
H-37275-4-1 | PXAC203302FVV1R250XTMA1EN342 KB11 Apr 201601_00
EN PXAC203302FV+V1+R250
EN where-to-buy
EN PXAC203302FV+V1+R250
EN PXAC203302FV+V1+R250